An electric-field-active 1377-nm narrow-line Si light-emitting diode at 150 K

Optics Express

Volumn 17, Issue 19, 2009, Pages 16739-16744

  Yasutake, Yuhsuke ^a   Igarashi, Jun ^a   Tana ami, Norishige ^a   Fukatsu, Susumu ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECTS; ELECTRIC FIELDS; ELECTROLUMINESCENCE; LIGHT; LIGHT EMITTING DIODES; SEMICONDUCTOR QUANTUM DOTS;

DEFECT STATE; GROWTH DIRECTIONS; INSB QUANTUM DOT; NARROW LINES; PEAK ENERGY; ROD-LIKE DEFECTS; SILICON-BASED; SPECTRAL VARIATION;

ELECTRIC LINES;

EID: 70349225595     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.17.016739     Document Type: Article

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