A Si-based quantum-dot light-emitting diode

Applied Physics Letters

Volumn 86, Issue 10, 2005, Pages 1-3

  Jo, M ^a   Ishida, K ^a   Yasuhara, N ^a   Sugawara, Y ^a,b   Kawamoto, K ^a   Fukatsu, S ^a,b  

^a UNIVERSITY OF TOKYO   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAMERAS; ELECTROLUMINESCENCE; IMAGING TECHNIQUES; INFRARED DEVICES; MOLECULAR BEAM EPITAXY; QUANTUM EFFICIENCY; RELAXATION PROCESSES; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR QUANTUM DOTS;

BANDEDGE LUMINESCENCE; EXTERNAL QUANTUM EFFICIENCY (EQE); INFRARED CAMERAS; QUANTUM-DOT LIGHT EMITTING DIODES (QD-LED);

LIGHT EMITTING DIODES;

EID: 17944370092     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1882757     Document Type: Article

References (6)

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