Deep energy levels formed by Se implantation in Si

Chinese Physics Letters

Volumn 28, Issue 3, 2011, Pages

  Gao, Li Peng ^a   Han, Pei De ^a   Mao, Xue ^a   Fan, Yu Jie ^a   Hu, Shao Xu ^a   Zhao, Chun Hua ^a   Mi, Yan Hong ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

1.55ΜM; CONCENTRATION-DEPTH PROFILE; DEEP ENERGY LEVELS; DEEP-LEVELS; DOPED SILICON; IN-DEPTH PROFILE; THREE-LEVEL;

SELENIUM;

EID: 79952491873     PISSN: 0256307X     EISSN: 17413540     Source Type: Journal    
DOI: 10.1088/0256-307X/28/3/036108     Document Type: Article

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