Optimisation of 660 nm high-power tapered diode lasers

IET Optoelectronics

Volumn 5, Issue 3, 2011, Pages 121-127

  Kaspari, C ^a   Blume, G ^b   Feise, D ^b   Paschke, K ^b   Erbert, G ^b   Weyers, M ^b  

^a LayTec GmbH   (Germany)

^b LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANALYTIC METHOD; DIFFRACTION LIMITED; DIFFRACTION LIMITS; DISPLAY APPLICATION; HIGH-POWER; OPTIMISATIONS; OUTPUT POWER; POWER LEVELS; SPECTRAL RANGE; TAPERED DIODE LASERS;

DIFFRACTION; DIODES; FLUORESCENCE MICROSCOPY; LIGHT SOURCES;

QUANTUM WELL LASERS;

EID: 80053063888     PISSN: 17518768     EISSN: None     Source Type: Journal    
DOI: 10.1049/iet-opt.2010.0034     Document Type: Article

References (18)

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