Astigmatism and beam quality of high-brightness tapered diode lasers

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5452, Issue , 2004, Pages 233-243

  Kelemen, M T ^a   Weber, J ^a   Kallenbach, S ^a   Pfahler, C ^a   Mikulla, M ^a   Weimann, G ^a  

^a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

Author keywords

Astigmatism; Beam Quality; High Brightness Diode Laser; High Power Diode Laser; Tapered Laser

Indexed keywords

COMPUTER SIMULATION; FIBER OPTICS; GAIN CONTROL; MICROOPTICS; MOLECULAR BEAM EPITAXY; OPTICAL COMMUNICATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

ASTIGMATISM; BEAM QUALITY; HIGH-BRIGHTNESS DIODE-LASERS; HIGH-POWER DIODE-LASERS; TAPERED LASERS;

SEMICONDUCTOR LASERS;

EID: 12344334670     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.545221     Document Type: Conference Paper

References (14)

1. A. Moser, E.E. Latta, Arrhenius parameters for the rate process leading to catastrophic damage of AlGaAs-GaAs laser facets, J. Appl. Phys., vol. 71, pp. 4848-4853, 1992
2. G. Beister, F. Bugge. G. Erbert, J. Maege, P. Ressel, J. Sebastian, A. Thies, H. Wenzel, Monomode emission at 350 mW and high reliability with InGaAs / AlGaAs ridge waveguide laser diodes, Electron. Lett., vol. 34, pp. 778, 1998
3. M.T. Kelemen, J. Weber, F. Rinner, J. Rogg, M. Mikulla, and G. Weimann, High-brightness 1040-nm tapered diode lasers, SPIE Proc., vol. 4947, p. 252-260, 2003
4. A. Al-Muhanna, L. J. Mawst, D. Botez, D. Z. Garbuzov, R. U. Martinalli, and J. C. Connolly, 14.3 W quasicontinuous wave front-facet power from broad-waveguide Al-free 970 run diode lasers, Appl. Phys. Lett. 71, pp. 1142-1145, 1997
5. M. Mikulla, P. Chazan, A. Schmitt, S. Morgott, A. Wetzel, M. Walther, R. Kiefer, W. Pletschen, J. Braunstein, and G. Weimann, High-Brightness Tapered Semiconductor Laser Oscillators and Amplifiers with Low-Modal Gain Epilayer-Structures, IEEE Photon. Techn. Lett., vol. 10, No. 5, pp. 654-656, 1998
6. M. Mikulla, Tapered High-Power, High-Brightness Diode Lasers: Design and Performance, High-Power Diode Lasers, Topics Appl. Phys., vol. 78, pp. 265-288, 2000
7. M.T. Kelemen, F. Rinner, J. Rogg, N. Wiedmann, R. Kiefer, M. Walther, M. Mikulla and G. Weimann, High-power high-brightness ridge-waveguide tapered diode lasers at 940 nm, SPIE Proc., vol. 4648, pp. 75-81, 2002
8. J. Stohs, D.J. Bossert, D.J. Gallant, and S.R.J. Brueck, Gain, Refractive Index Change, and Linewidth Enhancement Factor in Broad-Area GaAs and InGaAs Quantum-Well Lasers, IEEE J. Quant. Electr., vol. 37, No. 11, pp. 1449-1459, 2001
9. G.G. Dente, Low Confinement Factors for Suppressed Filaments in Semiconductor Lasers, IEEE J. Quant. Electron., vol. 37, no. 12, pp. 1650-1653, 2001
10. M.T. Kelemen, J. Weber, J. Rogg, F. Rinner, M. Mikulla, and G. Weimann, Beam quality and linewidth enhancement factor of ridge-waveguide tapered diode lasers, IEEE, ix+170, p. 81-82, 2002
11. E.S. Kintzer, J.N. Walpole, S.R. Chinn, C.A. Wang, and L.J. Missaggia, High-Power, Strained-Layer Amplifiers and Lasers with Tapered Gain Regions, IEEE Photon. Technol. Lett., vol. 5, pp. 605-608, 1993
12. J. Rogg, K. Boucke, M.T. Kelemen, F. Rinner, W. Pletschen, R. Kiefer, M. Walther, M. Mikulla, R. Poprawe, and G. Weimann, High-brightness laser diodes using angular filtering by total reflection, SPIE Proc., vol. 4287, pp. 195-201, 2001
13. M. Mikulla, M. T. Kelemen, M. Walther, R. Kiefer, R. Moritz, and G. Weimann, High-power 980 nm laser diodes by MBE, SPIE Proc., vol. 4580, pp. 11-18, 2001
14. R.J. Lang, A. Hardy, R. Parke, D. Mehuys, S. O¥Brien, J. Major, and D. Welch, Numerical Analysis of Flared Semiconductor Laser Amplifiers, IEEE J. Quant, Electr., vol. 29, No. 6, pp. 2044-2051, 1993