N-Channel organic thin-film transistors based on naphthalene- bis(dicarboximide) polymer for organic transistor memory using hole-acceptor layer

Japanese Journal of Applied Physics

Volumn 50, Issue 9 PART 1, 2011, Pages

  Mohamad, Khairul Anuar ^a,b   Yousuke, Kakuta ^b   Uesugi, Katsuhiro ^b   Fukuda, Hisashi ^b  

^a UNIVERSITI MALAYSIA SABAH   (Malaysia)

^b MURORAN INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACCEPTOR LAYERS; GATE BIAS; MEMORY WINDOW; N-CHANNEL; ORGANIC DIELECTRIC LAYERS; ORGANIC THIN FILM TRANSISTORS; ORGANIC TRANSISTOR; POLY-3-HEXYLTHIOPHENE; SATURATION MOBILITY; SOURCE-DRAIN CONTACTS; STORAGE LAYERS; THRESHOLD VOLTAGE SHIFTS;

ESTERS; THIN FILM TRANSISTORS; THRESHOLD VOLTAGE; TRANSISTORS;

NAPHTHALENE;

EID: 80052995579     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.50.091603     Document Type: Article

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