High-performance n-channel organic thin-film transistor for CMOS circuits using electron-donating self-assembled layer

IEEE Electron Device Letters

Volumn 31, Issue 9, 2010, Pages 1044-1046

  Kim, Sung Hoon ^a   Lee, Sun Hee ^a   Jang, Jin ^a  

^a Kyung Hee University   (South Korea)

Author keywords

n type; organic thin film transistor (OTFT); PDI 8CN2; self assembled monolayer (SAM); solution process

Indexed keywords

CMOS CIRCUITS; ELECTRON-DONATING; ELECTRONWITHDRAWING; FIELD-EFFECT MOBILITIES; INJECTION BARRIERS; N-CHANNEL; N-TYPE; ORGANIC SEMICONDUCTOR; ORGANIC THIN FILM TRANSISTORS; ORGANIC THIN-FILM TRANSISTOR (OTFT); PDI-8CN2; SELF-ASSEMBLED; SOLUTION PROCESS; SOLUTION-PROCESSED; SOURCE/DRAIN ELECTRODES; THIOPHENOLS;

CMOS INTEGRATED CIRCUITS; ELECTRONS; SELF ASSEMBLED MONOLAYERS; SEMICONDUCTING ORGANIC COMPOUNDS; THIN FILM CIRCUITS;

THIN FILM TRANSISTORS;

EID: 77956171365     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2052092     Document Type: Article

References (18)

1. C. R. Newman, C. D. Frisbie, D. A. da Silva Filho, J. L. Brédas, P. C. Ewbank, and K. R. Mann, "Introduction to organic thin film transistors and design of n-channel organic semiconductors," Chem. Mater, vol.16, no.23, pp. 4824-14451, Apr. 2004.
2. A. Facchetti, M. H. Yoon, and T. J. Marks, "Gate dielectrics for organic field-effect transistors: New opportunities for organic electronics," Adv. Mater., vol.17, no.14, pp. 1705-1725, Jul. 2005.
3. S. H. Han, J. H. Kim, and J. Jang, "Lifetime of organic thin-film transistors with organic passivation layers," Appl. Phys. Lett., vol.88, no.7, p. 073 519, Feb. 2006.
4. S. H. Lee, M. H. Choi, S. H. Han, D. J. Choo, J. Jang, and S. K. Kwon, "High-performance thin-film transistor with 6, 13- bis(triisopropylsilylethynyl) pentacene by inkjet printing," Organ. Electron., vol.9, no.5, pp. 721-726, Oct. 2008.
5. S. K. Park, J. E. Anthony, and T. N. Jackson, "Solution-processed TIPS-pentacene organic thin-film-transistor circuits," IEEE Electron Device Lett., vol.28, no.10, pp. 877-879, Oct. 2007.
6. E. Y. Park, J. S. Park, T. D. Kim, K. S. Lee, H. S. Lim, J. S. Lim, and C. J. Lee, "High-performance n-type organic field-effect transistors fabricated by ink-jet printing using a C60 derivative," Organ. Electron., vol.10, no.5, pp. 1028-1031, Aug. 2009.
7. J. Zaumseil, T. Someya, K. Baldwin, Z. Bao, Y.-L. Loo, and J. A. Rogers, "Nanoscale organic transistors formed by soft contact lamination and source/drain electrodes supported by high resolution rubber stamps," Appl. Phys. Lett., vol. 82, no. 5, pp. 793-795, Feb. 2003.
8. J. Zaumseil, K. Baldwin, and J. A. Rogers, "Contact resistance in organic transistors that use source and drain electrodes formed by soft contact lamination," J. Appl. Phys., vol. 93, no. 10, pp. 6117-6124, May 2003.
9. X. Yan, J. Wang, H. Wang, H. Wang, and D. Yan, "Improved n-type organic transistors by introducing organic heterojunction buffer layer under source/drain electrodes," Appl. Phys. Lett., vol. 89, no. 5, p. 053 510, Aug. 2006.
10. T. W. Lee, Y. Byun, B. W. Koo, I. N. Kang, Y. Y. Lyu, C. H. Lee, L. Pu, and S. Y. Lee, "All-solution-processed n-type organic transistors using a spinning metal process," Adv. Mater., vol.17, no.18, pp. 2180-2184, Sep. 2005.
11. S. Cho, J. H. Seo, K. H Lee, and A. J. Heeger, "Enhanced performance of fullerene n-channel field-effect transistors with titanium sub-oxide injection layer," Adv. Funct. Mater., vol.19, no.9, pp. 1459-1464, May 2009.
12. X. Cheng, Y. Y. Noh, J. Wang, M. Tello, J. Frisch, R. Blum, A. Vollmer, J. P. Rabe, N. Koch, and H. Sirringhaus, "Controlling electron and hole charge injection in ambipolar organic field-effect transistors by self-assembled monolayers," Adv. Funct. Mater., vol.19, no.15, pp. 2407-2415, Aug. 2009.
13. Y. Wu, Y. Li, and B. S. Ong, "Printed silver ohmic contacts for high-mobility organic thin-film transistors," J. Amer. Chem. Soc., vol.128, no.13, pp. 4202-4203, Mar. 2006.
14. M. Kitamura, Y. Kuzumoto, S. Aomori, M. Kamura, J. H. Na, and Y. Arakawa, "Threshold voltage control of bottom-contact n-channel organic thin-film transistors using modified drain/source electrodes," Appl. Phys. Lett., vol.94, no.8, p. 083 310, Feb. 2009.
15. H. N. Tsao, D. Cho, J. W. Andreasen, A. Rouhanipour, D. W. Breiby, W. Pisula, and K. Mullen, "The influence of morphology on high-performance polymer field-effect transistors," Adv. Mater., vol.21, no.2, pp. 209-212, Jan. 2009.
16. M. Tello, M. Chiesa, C. M. Duffy, and H. Sirringhaus, "Charge trapping in intergrain regions of pentacene thin film transistors," Adv. Funct. Mater., vol.18, no.24, pp. 3907-3913, Dec. 2008.
17. P. V. Necliudov, M. S. Shur, D. J. Gundlach, and T. N. Jackson, "Contact resistance extraction in pentacene thin film transistors," Solid State Electron., vol.47, no.2, pp. 259-262, Feb. 2003.
18. D. J. Gundlach, L. Zhou, J. A. Nichols, T. N. Jackson, P. V. Necliudov, and M. S. Shur, "An experimental study of contact effects in organic thin film transistors," J. Appl. Phys. Lett., vol.100, no.2, p. 024 509, Jul. 2006.