SCOPUS 정보 검색 플랫폼

Applied Surface Science

Volumn 257, Issue 24, 2011, Pages 10499-10502

Studies on the structural and electrical properties of F-doped SnO 2 film prepared by APCVD

(6) Yang, Jingkai a Liu, Wenchang a Dong, Lizhong a Li, Yuanxun a Li, Chuan a Zhao, Hongli a

a YANSHAN UNIVERSITY (China)

Author keywords

Crystal structure; Electrical properties; Photoelectron spectroscopy; Thin films; Vapor deposition

Indexed keywords

CALCIUM COMPOUNDS; CHEMICAL VAPOR DEPOSITION; CRYSTAL IMPURITIES; CRYSTAL STRUCTURE; ELECTRIC PROPERTIES; FILM GROWTH; GRAIN BOUNDARIES; GRAIN GROWTH; HALL MOBILITY; NANOCOMPOSITES; PHOTOELECTRON SPECTROSCOPY; PHOTOELECTRONS; PHOTONS; SILICON COMPOUNDS; SODIUM COMPOUNDS; THIN FILMS; TIN OXIDES; VAPOR DEPOSITION; X RAY PHOTOELECTRON SPECTROSCOPY;

ABNORMAL GRAIN GROWTH; ATMOSPHERE PRESSURE CHEMICAL VAPOR DEPOSITIONS; DIFFUSION BARRIER LAYERS; ELEMENT DISTRIBUTION; FLUORINE-DOPED TIN OXIDE FILMS; GRAIN BOUNDARY SCATTERING; IONIZED IMPURITY SCATTERING; STRUCTURAL AND ELECTRICAL PROPERTIES;

OXIDE FILMS;

EID: 80052955701 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/j.apsusc.2011.07.025 Document Type: Article

Times cited : (43)

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