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Journal of Applied Physics

Volumn 110, Issue 5, 2011, Pages

InGaN light-emitting diodes with indium-tin-oxide photonic crystal current-spreading layer

(2) Li, K H a Choi, H W a

a UNIVERSITY OF HONG KONG (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

AS-GROWN; ETCH DAMAGE; ETCH MASK; FINITE DIFFERENCE TIME DOMAIN SIMULATIONS; INDIUM TIN OXIDE; INDIUM TIN OXIDE LAYERS; INGAN/GAN; MONOLAYER ARRAYS; NANO SPHERE LITHOGRAPHY; OPTICAL EMISSIONS; OPTICAL PERFORMANCE; RIGOROUS COUPLED WAVE ANALYSIS; SELF-ASSEMBLED; SEMICONDUCTOR LAYERS; SILICA SPHERE;

DIODES; ELECTRIC PROPERTIES; FINITE DIFFERENCE TIME DOMAIN METHOD; INDIUM; INDIUM COMPOUNDS; LIGHT EMISSION; MONOLAYERS; OXIDE FILMS; PHOTONIC CRYSTALS; SEMICONDUCTING INDIUM; SEMICONDUCTOR DIODES; SILICA; TIME DOMAIN ANALYSIS; TIN; TIN OXIDES; TINNING;

LIGHT EMITTING DIODES;

EID: 80052922590 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3631797 Document Type: Conference Paper

Times cited : (30)

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