Simulation and analysis on the property of aluminum back-surface-field of monocrystalline silicon solar cells

Journal of Optoelectronics and Advanced Materials

Volumn 13, Issue 4, 2011, Pages 432-438

  Cao, X L ^a   Chen, Y M ^a  

^a CENTRAL SOUTH UNIVERSITY   (China)

Author keywords

Al BSF; Doping profile; Electronic property; The trap level

Indexed keywords

ALUMINUM; ATOMS; ELECTRONIC PROPERTIES; MONOCRYSTALLINE SILICON; SILICON SOLAR CELLS;

ATOMIC CONCENTRATION; BACK SURFACE FIELDS; BACK-SURFACE RECOMBINATION VELOCITY; DOPING PROFILES; EFFECTS OF THICKNESS; OPTIMUM THICKNESS; SIMULATION AND ANALYSIS; TRAP LEVELS;

ALUMINUM COMPOUNDS;

EID: 80052630244     PISSN: 14544164     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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