Study of InGaN-based light-emitting diodes on a roughened backside GaN substrate by a chemical wet-etching process

IEEE Photonics Technology Letters

Volumn 23, Issue 19, 2011, Pages 1373-1375

  Fu, Yi Keng ^a   Chen, Bo Chun ^b   Fang, Yen Hsiang ^a   Jiang, Ren Hao ^c   Lu, Yu Hsuan ^d   Xuan, Rong ^b   Huang, Kai Feng ^b   Lin, Chia Feng ^c   Su, Yan Kuin ^d   Chen, Jebb Fang ^b   Chang, Chun Yen ^b  

^a INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^c NATIONAL CHUNG HSING UNIVERSITY   (Taiwan)

^d NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

Chemical wet etching; GaN; light extraction; near ultraviolet (NUV) light emitting diode (LED)

Indexed keywords

BLUE LEDS; FORWARD CURRENTS; GAN; GAN SUBSTRATE; HEXAGONAL PYRAMIDS; LIGHT EXTRACTION; LIGHT-EXTRACTION EFFICIENCY; OUTPUT POWER; WET-ETCHING PROCESS;

DIODES; EXTRACTION; GALLIUM NITRIDE; LIGHT EMISSION; LIGHT EMITTING DIODES;

WET ETCHING;

EID: 80052610066     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2011.2161276     Document Type: Article

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