Controlling crystal structure and oxidation state in molybdenum nitrides through epitaxial stabilization

Journal of Physical Chemistry C

Volumn 115, Issue 36, 2011, Pages 17880-17883

  Luo, Hongmei ^a   Zou, Guifu ^b   Wang, Haiyan ^c   Lee, Joon Hwan ^c   Lin, Yuan ^d   Peng, Huisheng ^e   Lin, Qianglu ^a   Deng, Shuguang ^a   Bauer, Eve ^b   McCleskey, T Mark ^b   Burrell, Anthony K ^b   Jia, Quanxi ^b  

^a New Mexico State University   (United States)

^b LOS ALAMOS NATIONAL LABORATORY   (United States)

^c Texas AandM University   (United States)

^d UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

^e FUDAN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURES; CHEMICAL COMPOSITIONS; CHEMICAL SOLUTION DEPOSITION TECHNIQUES; EPITAXIAL RELATIONSHIPS; EPITAXIAL STABILIZATION; MOLYBDENUM NITRIDE; MOLYBDENUM NITRIDE FILMS; OXIDATION STATE; PRECURSOR SOLUTIONS; PROCESSING PARAMETERS; SRTIO;

CRYSTAL STRUCTURE; ELECTRIC PROPERTIES; EPITAXIAL FILMS; EPITAXIAL GROWTH; FILM GROWTH; HIGH RESOLUTION ELECTRON MICROSCOPY; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; NITRIDES; OXIDATION; STRONTIUM ALLOYS; STRONTIUM TITANATES; SUPERCONDUCTING FILMS; SUPERCONDUCTING TRANSITION TEMPERATURE; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

MOLYBDENUM;

EID: 80052554917     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp2048376     Document Type: Article

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