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Volumn 98, Issue 12, 2011, Pages

The effect of trimethylgallium flows in the AlInGaN barrier on optoelectronic characteristics of near ultraviolet light-emitting diodes grown by atmospheric pressure metalorganic vapor phase epitaxy

(9) Fu, Yi Keng a Jiang, Ren Hao a,b Lu, Yu Hsuan a,c Chen, Bo Chun a Xuan, Rong a,d Fang, Yen Hsiang a Lin, Chia Feng b Su, Yan Kuin c Chen, Jenn Fang d

a INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE (Taiwan)

b NATIONAL CHUNG HSING UNIVERSITY (Taiwan)

c NATIONAL CHENG KUNG UNIVERSITY (Taiwan)

d NATIONAL CHIAO TUNG UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE LAYER; ALINGAN; DEVICE PERFORMANCE; DEVICE SIMULATIONS; ELECTRON OVERFLOW; EXPERIMENTAL STUDIES; FORWARD VOLTAGE; INDUCED POLARIZATION; LIGHT OUTPUT POWER; METAL-ORGANIC VAPOR PHASE EPITAXY; MOLE FRACTION; NEAR ULTRAVIOLET; OPTOELECTRONIC CHARACTERISTICS; QUANTUM BARRIERS; TRIMETHYL GALLIUM;

ATMOSPHERIC PRESSURE; GALLIUM NITRIDE; LATTICE MISMATCH; LIGHT EMISSION; PRESSURE EFFECTS; ULTRAVIOLET RADIATION;

LIGHT EMITTING DIODES;

EID: 79953848256 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3571440 Document Type: Article

Times cited : (33)

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