Opto-electronic characterization of electron traps upon forming polymer oxide memory diodes

Applied Physics Letters

Volumn 99, Issue 8, 2011, Pages

  Chen, Qian ^a   Bory, Benjamin F ^c   Kiazadeh, Asal ^a   Rocha, Paulo R F ^a   Gomes, Henrique L ^a   Verbakel, Frank ^b   De Leeuw, Dago M ^b   Meskers, Stefan C J ^c  

^a UNIVERSITY OF ALGARVE   (Portugal)

^b PHILIPS RESEARCH LABORATORIES   (Netherlands)

^c EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

APPLIED VOLTAGES; DE-TRAPPING; DISCHARGING CURRENT; ELECTRON TRANSPORT; INITIAL STAGES; NON-VOLATILE MEMORIES; OXIDE THICKNESS; SHORT-CIRCUIT CONDITIONS; SOFT BREAKDOWN; STORED CHARGE; THIN OXIDES;

DIODES; METAL INSULATOR BOUNDARIES; POWER QUALITY;

POLYMERS;

EID: 80052395014     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3628301     Document Type: Article

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