Breakdown mechanism of Al2O3 based metal-to-metal antifuses

Solid-State Electronics

Volumn 44, Issue 9, 2000, Pages 1557-1562

  Li, Wei Tang ^a   McKenzie, David R ^a   McFall, William D ^a   Zhang, Qi Chu ^a   Wiszniewski, Witold ^b  

^a UNIVERSITY OF SYDNEY   (Australia)

^b Quality Semiconductor Australia   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; ELECTRIC CONDUCTIVITY OF SOLIDS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; THRESHOLD VOLTAGE;

IMPULSE THERMAL BREAKDOWN MODELS; METAL-TO-METAL ANTIFUSES;

THIN FILM DEVICES;

EID: 0034274243     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(00)00125-8     Document Type: Article

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