High-Q, large-stopband-rejection integrated CMOS-MEMS oxide resonators with embedded metal electrodes

2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11

Volumn , Issue , 2011, Pages 934-937

  Liu, Yu Chia ^a   Tsai, Ming Han ^a   Chen, Wen Chien ^a   Li, Sheng Shian ^a   Fang, Weileun ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

CMOS MEMS; High selectivity; High Q; Integration; Metal release; Oxide resonator

Indexed keywords

CMOS-MEMS; EMBEDDED METALS; HIGH SELECTIVITY; HIGH-Q; ISOTROPIC ETCHING; MASK LESS; MAXIMUM BREAKDOWN VOLTAGE; METAL RELEASE; METAL WET ETCHING; MONOLITHICALLY INTEGRATED; Q ENHANCEMENT; READOUT CIRCUITRY; RESONATOR CONFIGURATION; RESONATOR STRUCTURES; STANDARD CMOS; STOPBAND REJECTION; TEMPERATURE COEFFICIENT OF FREQUENCIES;

ACTUATORS; ANCHORS; ELECTRODES; INTEGRATION; METALS; MICROELECTROMECHANICAL DEVICES; MICROSYSTEMS; MONOLITHIC INTEGRATED CIRCUITS; RESONATORS; SILICON COMPOUNDS; SOLID-STATE SENSORS; WET ETCHING;

VANADIUM;

EID: 80052122838     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/TRANSDUCERS.2011.5969681     Document Type: Conference Paper

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