Hole-driven MIT theory, Mott transition in VO2, MoBRiK device

Physica C: Superconductivity and its Applications

Volumn 460-462 II, Issue SPEC. ISS., 2007, Pages 1076-1078

  Kim, Hyun Tak ^a   Kim, Bong Jun ^a   Lee, Yong Wook ^a   Chae, Byung Gyu ^a   Yun, Sun Jin ^a   Kang, Kwang Yong ^a  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

Brinkman Rice picture; Hole driven MIT theory; Inhomogeneous system; Mott transition; VO2

Indexed keywords

DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; ELECTRIC FIELD EFFECTS; METAL INSULATOR TRANSITION; VANADIUM COMPOUNDS;

HOLE DOPING; INHOMOGENEOUS SYSTEMS; MOTT SYSTEMS; MOTT TRANSITION;

HIGH TEMPERATURE SUPERCONDUCTORS;

EID: 34548242719     PISSN: 09214534     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physc.2007.03.356     Document Type: Article

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