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Volumn 98, Issue 19, 2011, Pages

Direct measurement of compositional complexity-induced electronic inhomogeneity in VO2 thin films grown on gate dielectrics

Author keywords

[No Author keywords available]

Indexed keywords

DIRECT MEASUREMENT; GATE INSULATOR; IDENTICAL CONDITIONS; INHOMOGENEITIES; NANOMETRIC SCALE;

GATE DIELECTRICS; GATES (TRANSISTOR); METAL INSULATOR BOUNDARIES; SEMICONDUCTOR INSULATOR BOUNDARIES; SILICON COMPOUNDS; SINGLE CRYSTALS; THIN FILMS;

METAL INSULATOR TRANSITION;

EID: 79959658761 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3590920 Document Type: Article

Times cited : (14)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.