High-quality 1.3 μm-wavelength GaInAsN/GaAs quantum wells grown by metalorganic vapor phase epitaxy on vicinal substrates

Applied Physics Letters

Volumn 99, Issue 7, 2011, Pages

  Fekete, D ^a,b   Carron, R ^b   Gallo, P ^b   Dwir, B ^b   Rudra, A ^b   Kapon, E ^b  

^a TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

^b EPFL   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

GAAS SUBSTRATES; HIGH QUALITY; N INCORPORATION; PHOTOLUMINESCENCE EFFICIENCY; SINGLE QUANTUM WELL; VICINAL SUBSTRATES;

DEFECT DENSITY; EPITAXIAL GROWTH; METALLORGANIC VAPOR PHASE EPITAXY; OPTICAL PROPERTIES; ORGANOMETALLICS; SUBSTRATES; VAPORS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 80052103620     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3623478     Document Type: Article

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