Amorphous silicon floating-gate thin film transistor

Device Research Conference - Conference Digest, DRC

Volumn , Issue , 2009, Pages 135-136

  Huang, Yifei ^a   Hekmatshoar, Bahman ^a   Wagner, Sigurd ^a   Sturm, James C ^a  

^a Princeton University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON (A-SI); DRAIN VOLTAGE; FLOATING GATES; MEMORY DEVICE; MEMORY ELEMENT; MEMORY WINDOW; RETENTION TIME; ROOM TEMPERATURE; TUNNEL DIELECTRICS;

AMORPHOUS FILMS; SEMICONDUCTING SILICON COMPOUNDS; THIN FILM TRANSISTORS; THRESHOLD VOLTAGE; WINDOWS;

AMORPHOUS SILICON;

EID: 76549135935     PISSN: 15483770     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DRC.2009.5354877     Document Type: Conference Paper

References (3)

1. Y. Kuo et al., Applied Physics Letters, vol 89, pp 173503-6, October 2006.
2. K. Cherenack et al., IEEE Electron Device Letters, Vol. 28, No. 11, pp. 1004-1006, NOVEMBER 2007.
3. S. T. Wang, IEEE Transactions on Electron Devices, Vol. ED-26, No. 9, pp. 1292-1293, September 1979.