High retention-time nonvolatile amorphous silicon TFT memory for static active matrix OLED display without pixel refresh

Device Research Conference - Conference Digest, DRC

Volumn , Issue , 2010, Pages 179-180

  Huang, Yifei ^a   Hekmatshoar, Bahman ^a   Wagner, Sigurd ^a   Sturm, James C ^a  

^a Princeton University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE MATRIX OLED; AM-OLED; DRAIN SATURATION CURRENT; DRAIN VOLTAGE; FLOATING GATES; NEW DEVICES; NON-VOLATILE; NON-VOLATILE MEMORIES; RETENTION TIME; ROOM TEMPERATURE;

DRAIN CURRENT; PIXELS;

AMORPHOUS SILICON;

EID: 77957562096     PISSN: 15483770     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DRC.2010.5551896     Document Type: Conference Paper

References (4)

1. Y. Kuo et al., Applied Physics Letters, vol 89, pp 173503-6, October.
2. Y. Huang et al, Proceedings of 67th Annual Device Research Conference, Conference Digest, p 135-136, June 2009.
3. S. T. Wang, IEEE Transactions on Electron Devices, Vol. ED-26, No. 9, pp. 1292-1293, September 1979.
4. S. J. Wrazien et al, Solid State Electronics vol 47, pp 885-891, 2003.