Enhancing Cu-Cu diffusion bonding at low temperature via application of self-assembled monolayer passivation

Journal of the Electrochemical Society

Volumn 158, Issue 10, 2011, Pages

  Lim, D F ^a   Goulet, S K ^b   Bergkvist, M ^b   Wei, J ^c   Leong, K C ^d   Tan, C S ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b STATE UNIVERSITY OF NEW YORK   (United States)

^c SINGAPORE INSTITUTE OF MANUFACTURING TECHNOLOGY   (Singapore)

^d GLOBALFOUNDRIES SINGAPORE PTE LTD   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

AMBIENT AIR; BONDED WAFERS; BONDING INTERFACES; CARBON-CHAIN LENGTH; CLEAN SURFACES; CONTROL WAFERS; CROSS-DIFFUSION; CU SURFACES; DEGREE OF PROTECTION; LOW TEMPERATURES; MECHANICAL SHEAR; MODERATE TEMPERATURE; OXYGEN IMPURITY; PARTIAL DEGRADATION; PILE-UPS; SELF-ASSEMBLE; SHORTER CHAINS; SURFACE CLEANLINESS; SURFACE OXIDATIONS; THERMAL-ANNEALING;

CHAIN LENGTH; DESORPTION; GRAIN GROWTH; PARAFFINS; PASSIVATION; SELF ASSEMBLED MONOLAYERS;

WAFER BONDING;

EID: 80052077442     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3622478     Document Type: Article

References (19)

1. C. S. Tan, R. J. Gutmann, and L. R. Reif, Overview of Wafer-Level 3D ICs., in Wafer Level 3-D ICs Process Technology, p. 1, Springer, NY (2008).
2. E. J. Jang, B. Kim, T. Matthias, S. Hyun, H. J. Lee, and Y. B. Park, Interconnect Technology Conference, IEEE, p. 165 (2009).
3. R. Agarwal and W. Ruythooren, Materials, Processes and Reliability for Advanced Interconnects for Micro and Nanoelectronics, p. 149, MRS, San Francisco, CA (2009).
4. L. Di Cioccio, P. Gueguen, T. Signamarcheix, M. Rivoire, D. Scevolab, R. Cahours, P. Leduc, M. Assous, and L. Clavelier, International Interconnect Technology Conference, IEEE, p. 152 (2009).
5. S. Taniyama, W. Ying-Hui, M. Fujino, and T. Suga, 9th VLSI Packaging Workshop, IEEE, p. 141 (2008).
6. D. A. Hutt and C. Liu, Appl. Surf. Sci., 252, 400 (2005). 10.1016/j.apsusc.2005.01.019 (Pubitemid 41282691)
7. P. E. Laibinis and G. M. Whitesides, J. Am. Chem. Soc., 114, 9022 (1992). 10.1021/ja00049a038
8. M. Metikos-Hukovic, R. Babic, Z. Petrovic, and D. Posavec, J. Electrochem. Soc., 154, 138 (2007). 10.1149/1.2404781 (Pubitemid 46094506)
9. J. C. Love, L. A. Estroff, J. K. Kriebel, R. G. Nuzzo, and G. M. Whitesides, Chem. Rev., 105, 1103 (2005). 10.1021/cr0300789 (Pubitemid 40600878)
10. C. M. Whelan, M. Kinsella, L. Carbonell, H. Hong Meng, and K. Maex, European Workshop on Materials for Advanced Metallization, IEEE, p. 551 (2003).
11. C. M. Whelan, M. Kinsella, H. M. Ho, and K. Maex, J. Electrochem. Soc., 151, B33 (2004). 10.1149/1.1635387
12. L. Changqing and D. A. Hutt, IEEE Trans. Compon. Packag. Technol., 29, 512 (2006). 10.1109/TCAPT.2005.853177 (Pubitemid 44363909)
13. S. J. Ebbens, D. A. Hutt, and C. Liu, 1st Electronics System integration Technology Conference, IEEE, p. 1360 (2007).
14. X. F. Ang, A. T. Lin, J. Wei, Z. Chen, and C. C. Wong, 10th Electronics Packaging Technology Conference, IEEE, p. 399 (2008).
15. X. F. Ang, J. Wei, Z. Chen, and C. C. Wong, Materials and Technologies for 3-D Integration. Symposium, MRS, p. 91 (2009).
16. P. Srivastava, W. G. Chapman, and P. E. Laibinis, J. Phys. Chem. B, 113, 456 (2009).
17. W. J. Y. Myung, M. Sung, Sun S. Lee, and Yunsoo Kim, Bull. Korean Chem. Soc., 24, 610 (2003).
18. L. Carbonell, C. M. Whelan, M. Kinsella, and K. Maex, European Materials Research Society Meeting, EMRS, p. 149 (2004).
19. D. Fuks, K. C. Mundim, L. A. C. Malbouisson, A. Berner, S. Dorfman, and D. E. Ellis, J. Mol. Struct., 539, 199 (2001).