Numerical study of metal oxide heterojunction solar cells

Semiconductor Science and Technology

Volumn 26, Issue 8, 2011, Pages

  Zhu, L ^a   Shao, G ^a   Luo, J K ^a  

^a UNIVERSITY OF BOLTON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAPS; BAND-GAP STRUCTURES; DOPING CONCENTRATION; HETEROJUNCTION SOLAR CELLS; HIGH-QUALITY MATERIALS; INTERFACE STATE; LAYER THICKNESS; METAL OXIDES; NUMERICAL MODELLING; NUMERICAL STUDIES; THEORETICAL STUDY; WIDE GAP;

ENERGY GAP; HETEROJUNCTIONS; METALLIC COMPOUNDS; SEMICONDUCTOR DOPING; SOLAR POWER GENERATION;

NANOSTRUCTURED MATERIALS;

EID: 80051974815     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/26/8/085026     Document Type: Article

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