Depth profiling of N and C in ion implanted ZnO and Si using deuterium induced nuclear reaction analysis

AIP Conference Proceedings

Volumn 1066, Issue , 2008, Pages 541-544

  Kennedy, John ^a   Murmu, Peter ^a   Markwitz, Andreas ^a  

^a GNS SCIENCE   (New Zealand)

Author keywords

Ion beam analysis; Ion implantation; Liquid nitrogen trap; Nuclear reaction analysis; Si; ZnO

Indexed keywords

EID: 80051949908     PISSN: 0094243X     EISSN: 15517616     Source Type: Conference Proceeding    
DOI: 10.1063/1.3033682     Document Type: Conference Paper

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