Structural and electrical properties of Ta2O5 thin films prepared by photo-induced CVD

Bulletin of Materials Science

Volumn 34, Issue 3, 2011, Pages 443-446

  Liu, Jun ^a   Wei, Aixiang ^a   Zhao, Xianghui ^a   Zhang, Haiyan ^a  

^a GUANGDONG UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

Chemical vapour deposition processes; Dielectric material; MOS capacitor; Oxides

Indexed keywords

AFM; AMORPHOUS PHASE; BREAKDOWN ELECTRIC FIELD; CAPACITANCE VOLTAGE; CHEMICAL VAPOUR DEPOSITION; CURRENT-VOLTAGE MEASUREMENTS; HOT FILAMENT; PHOTO-INDUCED; STRUCTURAL AND ELECTRICAL PROPERTIES; TA2O5 THIN FILMS; ULTRA-VIOLET LIGHT; UV-LIGHT;

AMORPHOUS FILMS; CHEMICAL VAPOR DEPOSITION; CRYSTAL ATOMIC STRUCTURE; DEPOSITION; DIELECTRIC DEVICES; DIELECTRIC MATERIALS; ELECTRIC FIELDS; ELECTRIC PROPERTIES; MOS CAPACITORS; OXIDE FILMS; SEMICONDUCTING SILICON; TANTALUM; TANTALUM OXIDES; THIN FILMS; ULTRAVIOLET RADIATION; X RAY DIFFRACTION;

FILM PREPARATION;

EID: 80051878424     PISSN: 02504707     EISSN: None     Source Type: Journal    
DOI: 10.1007/s12034-011-0106-4     Document Type: Article

References (8)

1. Atanassova E and Paskaleva A 2007 Microelectron. Reliab. 47 913
2. Huang T W, Lee H Y, Hsieh Y W and Lee C H 2002 J. Cryst. Growth 237-239 492
3. Jain P, Juneja J S, Bhagwat V, Rymaszewski EJ, Lu T M and Cale T S 2005 J. Vac. Sci. Technol. A 23 512
4. Jolly F, Passacantando M, Salerni V, Lozzi L, Picozzi P and Santucci S 2003 J. Non-Cryst. Solids 322 233
5. Kim H J, Song J S, Kim In-S and Kim S-S 2005 Thin Solid Films 446 124
6. Lee C C and Jan D J 2005 Thin Solid Films 483 130
7. Losurdo M, Giangregorio M M, Bruno G, Yang D X, Irene E A, Suvorova A A and Saunders M 2007 Appl. Phys. Lett. 91 091914
8. Watanabe A, Mukaida M, Imai Y, Osato K, Kameyama T and Fukuda K 1993 J. Mater. Sci. 28 5363