Compact silicon carbide switch for high voltage operation

Proceedings of the 2008 IEEE International Power Modulators and High Voltage Conference, PMHVC

Volumn , Issue , 2008, Pages 17-20

  James, C ^a   Hettler, C ^a   Dickens, J ^a   Neuber, A ^a  

^a Texas Tech University   (United States)

Author keywords

PCSS; Photoconductive switching; SiC; Silicon carbide

Indexed keywords

6H-SILICON CARBIDES; CONDUCTION RESISTANCES; CONTACT MATERIALS; HIGH ELECTRICAL BREAKDOWNS; HIGH RESISTIVITIES; HIGH-POWER; HIGH-VOLTAGE OPERATIONS; ND : YAG LASERS; PCSS; PHOTOCONDUCTIVE MATERIALS; PHOTOCONDUCTIVE SEMICONDUCTOR SWITCHES; PHOTOCONDUCTIVE SWITCHING; RISE TIME; SIC; TEST BEDS;

DC GENERATORS; ELECTRIC BREAKDOWN; ELECTRIC SWITCHGEAR; EQUIPMENT TESTING; JITTER; NEODYMIUM LASERS; OHMIC CONTACTS; OPTICAL PROPERTIES; PHOTOCONDUCTIVITY; SEMICONDUCTING SILICON; SEMICONDUCTOR SWITCHES; SILICON CARBIDE; TRANSITION METALS; VANADIUM;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 62949157076     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IPMC.2008.4743565     Document Type: Conference Paper

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