Opportunities for employing silicon carbide in high power photo-switches

Digest of Technical Papers-IEEE International Pulsed Power Conference

Volumn , Issue , 2003, Pages 823-826

  Nunnally, W ^a   Mazzola, M ^b  

^a UNIVERSITY OF MISSOURI   (United States)

^b MISSISSIPPI STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

PHOTOSWITCHES; POWER SWITCHES;

CARRIER MOBILITY; CURRENT DENSITY; ELECTRIC CONDUCTANCE; ELECTRIC FIELD EFFECTS; ELECTRIC RESISTANCE; ENERGY GAP; LIGHT ABSORPTION; PHOTOCONDUCTING DEVICES; PHOTOCONDUCTIVITY; PHOTONS; QUANTUM EFFICIENCY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR SWITCHES; VOLTAGE DISTRIBUTION MEASUREMENT;

SILICON CARBIDE;

EID: 1542285799     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. M. Bickermann, D. Hofmann, T. L. Straubinger, R. Weingartner, and A. Winnacker, "On the preparation of Vanadium-Doped Semi-Insulating SiC Bulk Crystals," Mat. Sci. Forum, Vols. 389-393, 2002, pp. 139-142.
2. J. Grillenberger, N. Achtziger, G. Pasold, and W. Witthuhn, "Polytype Dependence of Transition Metal-Related Deep Levels in 4H-, 6H-, and 15R-SiC," Mat. Sci. Forum, Vols. 389-393, 2002, pp. 573-576.
3. W. C. Mitchel, A. Saxler, R. Perrin, J. Goldstein, S.R. Smith, A.O. Evwaraye, J.S. Solomon, M. Brady, V. Tsvetkov, and C.H. Carter, Jr., "Vandadium-free Semi-insulating 4H-SiC Substrates," Mat. Sci. Forum, Vols. 389-393, 2002, pp. 21-24.
4. Properties of Advanced Semiconductor Materials, editor M. E. Levinshtein, Wiley and Sons, NewYork, 2001.
5. R. Weingartner, P.J. Wellmann, M. Bickermann, D. Hofmann, T. L. Straubinger, and A. Winnacker, "Determination of charge carrier concentration in n- and p-doped SiC based on optical absorption measurements", Applied Physics Letters, Vol. 80, No. 1, January 2002, pp. 70-72.
6. "Deep level centers in Silicon Carbide: A. Review", A. Lebedev, Semiconductors, Vol. 33, No. 2, February 1999, pp. 107-129.