Theoretical investigation of silicide Schottky barrier detector integrated in horizontal metal-insulator-silicon-insulator-metal nanoplasmonic slot waveguide

Optics Express

Volumn 19, Issue 17, 2011, Pages 15843-15854

  Zhu, Shiyang ^a   Lo, G Q ^a   Kwong, D L ^a  

^a INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

DETECTORS; ELECTROMAGNETIC WAVE POLARIZATION; METAL INSULATOR BOUNDARIES; METALS; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR INSULATOR BOUNDARIES; SILICIDES; SURFACE PLASMON RESONANCE; WAVEGUIDES;

1550 NM; EXTERNAL VOLTAGES; METAL INSULATOR SILICONS; RESPONSIVITY; ROOM TEMPERATURE; SCHOTTKY BARRIER DETECTORS; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY EFFECT; SELF-ALIGNED SILICIDES; SILICIDE LAYERS; SILICON CORES; SLOT WAVEGUIDE; SURFACE PLASMON POLARITONS; TELECOMMUNICATION WAVELENGTHS; THEORETICAL INVESTIGATIONS; ULTRA-THIN;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 80051755662     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.19.015843     Document Type: Article

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