Silicide Schottky-barrier phototransistor integrated in silicon channel waveguide for in-line power monitoring

IEEE Photonics Technology Letters

Volumn 21, Issue 3, 2009, Pages 185-187

  Zhu, Shiyang ^a   Lo, G Q ^a   Yu, M B ^a   Kwong, D L ^a  

^a INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

In line power monitor; Near infrared; Phototransistor; Schottky barrier; Silicide; Silicon waveguide

Indexed keywords

INFRARED DEVICES; INSERTION LOSSES; NICKEL COMPOUNDS; PHOTOTRANSISTORS; PLASMA FILLED WAVEGUIDES; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; SILICIDES; WAVEGUIDES;

IN-LINE POWER MONITOR; NEAR-INFRARED; PHOTOTRANSISTOR; SCHOTTKY-BARRIER; SILICIDE; SILICON WAVEGUIDE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 59649124271     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2008.2009946     Document Type: Article

References (8)

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