SCOPUS 정보 검색 플랫폼

Journal of the Electrochemical Society

Volumn 158, Issue 8, 2011, Pages

Local epitaxial growth of Ru thin films by atomic layer deposition at low temperature

(6) Kim, Seong Keun a Han, Sora a Kim, Gun Hwan a Jang, Jae Hyuck a Han, Jeong Hwan a Hwang, Cheol Seong a

a Seoul National University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION METHODS; FACE-CENTERED CUBIC METALS; LATTICE-MATCHED; LOW GROWTH TEMPERATURE; LOW TEMPERATURES; METAL FILM; ORIENTED FILMS; RU FILM; RU THIN FILMS; STRUCTURAL COMPATIBILITY;

ATOMIC LAYER DEPOSITION; DEPOSITION; FILM GROWTH; GOLD; LATTICE MISMATCH; PLATINUM; SUBSTRATES; VAPOR DEPOSITION;

EPITAXIAL FILMS;

EID: 80051753653 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/1.3596018 Document Type: Article

Times cited : (17)

References (16)

1
- 0034272551
- 10.1149/1.1393901
- M. Schuisky, A. Hrsta, A. Aidla, K. Kukli, A.-A. Kiisler, and J. Aarik, J. Electrochem. Soc., 147, 3319 (2000). 10.1149/1.1393901
- (2000) J. Electrochem. Soc. , vol.147 , pp. 3319
- Schuisky, M.¹ Hrsta, A.² Aidla, A.³ Kukli, K.⁴ Kiisler, A.-A.⁵ Aarik, J.⁶

2
- 77953134343
- 10.1016/j.snb.2010.03.065
- D. H. Kim, W.-S. Kim, S. B. Lee, and S.-H. Hong, Sens. Actuators B, 147, 653 (2010). 10.1016/j.snb.2010.03.065
- (2010) Sens. Actuators B , vol.147 , pp. 653
- Kim, D.H.¹ Kim, W.-S.² Lee, S.B.³ Hong, S.-H.⁴

3
- 0242413209
- 10.1016/j.jcrysgro.2003.08.042
- J. Lu, J. Sundqvist, M. Ottosson, A. Tarre, A. Rosental, J. Aarik, and A. Hrsta, J. Cryst. Growth, 260, 191 (2004). 10.1016/j.jcrysgro.2003.08.042
- (2004) J. Cryst. Growth , vol.260 , pp. 191
- Lu, J.¹ Sundqvist, J.² Ottosson, M.³ Tarre, A.⁴ Rosental, A.⁵ Aarik, J.⁶ Hrsta, A.⁷

4
- 77951972779
- 10.1021/cm100057y
- S. K. Kim, J. H. Han, G. H. Kim, and C. S. Hwang, Chem. Mater., 22, 2850 (2010). 10.1021/cm100057y
- (2010) Chem. Mater. , vol.22 , pp. 2850
- Kim, S.K.¹ Han, J.H.² Kim, G.H.³ Hwang, C.S.⁴

5
- 34249871079
- 2 surfaces
- DOI 10.1021/la061898u
- K. J. Park, D. B. Terry, S. M. Stewart, and G. N. Parsons, Langmuir, 23, 6106 (2007). 10.1021/la061898u (Pubitemid 46868680)
- (2007) Langmuir , vol.23 , Issue.11 , pp. 6106-6112
- Park, K.J.¹ Terry, D.B.² Stewart, S.M.³ Parsons, G.N.⁴

6
- 78951491594
- 10.1016/j.apsusc.2010.12.043
- S. K. Kim, S. Han, H. J. Han, and C. S. Hwang, Appl. Surf. Sci., 257, 4302 (2011). 10.1016/j.apsusc.2010.12.043
- (2011) Appl. Surf. Sci. , vol.257 , pp. 4302
- Kim, S.K.¹ Han, S.² Han, H.J.³ Hwang, C.S.⁴

7
- 33846200857
- Atomic layer deposition of Ru thin films using 2,4-(dimethylpentadienyl) (ethylcyclopentadienyl)Ru by a liquid injection system
- DOI 10.1149/1.2403081
- S. K. Kim, S. Y. Lee, S. W. Lee, G. W. Hwang, C. S. Hwang, J. W. Lee, and J. Jeong, J. Electrochem. Soc., 154, D95 (2007). 10.1149/1.2403081 (Pubitemid 46094513)
- (2007) Journal of the Electrochemical Society , vol.154 , Issue.2
- Kim, S.K.¹ Lee, S.Y.² Lee, S.W.³ Hwang, G.W.⁴ Hwang, C.S.⁵ Lee, J.W.⁶ Jeong, J.⁷

8
- 0041916147
- 10.1149/1.1595312
- T. Aaltonen, A. Rahtu, M. Ritala, and M. Leskel, Electrochem. Solid-State Lett., 6, C130 (2003). 10.1149/1.1595312
- (2003) Electrochem. Solid-State Lett. , vol.6 , pp. 130
- Aaltonen, T.¹ Rahtu, A.² Ritala, M.³ Leskel, M.⁴

9
- 0037943019
- 10.1002/cvde.v9:1
- T. Aaltonen, P. Alén, M. Ritala, and M. Leskel, Chem. Vap. Deposition, 9, 45 (2003). 10.1002/cvde.v9:1
- (2003) Chem. Vap. Deposition , vol.9 , pp. 45
- Aaltonen, T.¹ Alén, P.² Ritala, M.³ Leskel, M.⁴

10
- 3142538692
- 10.1002/cvde.v10:4
- T. Aaltonen, M. Ritala, K. Arstila, J. Keinonen, and M. Leskel, Chem. Vap. Deposition, 10, 215 (2004). 10.1002/cvde.v10:4
- (2004) Chem. Vap. Deposition , vol.10 , pp. 215
- Aaltonen, T.¹ Ritala, M.² Arstila, K.³ Keinonen, J.⁴ Leskel, M.⁵

11
- 11244346842
- Atomic layer deposition of noble metals: Exploration of the low limit of the deposition temperature
- DOI 10.1557/JMR.2004.0426
- T. Aaltonen, M. Ritala, Y.-L. Tung, Y. Chi, K. Arstila, K. Meinader, and M. Leskel, J. Mater. Res., 19, 3353 (2004). 10.1557/JMR.2004.0426 (Pubitemid 40055664)
- (2004) Journal of Materials Research , vol.19 , Issue.11 , pp. 3353-3358
- Aaltonen, T.¹ Ritala, M.² Tung, Y.-L.³ Chi, Y.⁴ Arstila, K.⁵ Meinander, K.⁶ Leskela, M.⁷

12
- 67651125015
- 10.1021/jp9021882
- S. K. Kim, S. Hoffmann-Eifert, and R. Waser, J. Phys. Chem. C, 113, 11329 (2009). 10.1021/jp9021882
- (2009) J. Phys. Chem. C , vol.113 , pp. 11329
- Kim, S.K.¹ Hoffmann-Eifert, S.² Waser, R.³

13
- 61849111633
- 10.1021/cm802485r
- J. H. Han, S. W. Lee, G.-J. Choi, S. Y. Lee, C. S. Hwang, C. Dussarrat, and J. Gatineau, Chem. Mater., 21, 207 (2009). 10.1021/cm802485r
- (2009) Chem. Mater. , vol.21 , pp. 207
- Han, J.H.¹ Lee, S.W.² Choi, G.-J.³ Lee, S.Y.⁴ Hwang, C.S.⁵ Dussarrat, C.⁶ Gatineau, J.⁷

14
- 1842477852
- 10.1149/1.1648612
- O.-K. Kwon, S.-H. Kwon, H.-S. Park, and S. W. Kang, Electrochem. Solid-State Lett., 7, C46 (2004). 10.1149/1.1648612
- (2004) Electrochem. Solid-State Lett. , vol.7 , pp. 46
- Kwon, O.-K.¹ Kwon, S.-H.² Park, H.-S.³ Kang, S.W.⁴

15
- 18644382518
- Microcontact patterning of ruthenium gate electrodes by selective area atomic layer deposition
- DOI 10.1063/1.1852079, 051903
- K. J. Park, J. M. Doub, T. Gougousi, and G. N. Parsons, Appl. Phys. Lett., 86, 051903 (2005). 10.1063/1.1852079 (Pubitemid 40661672)
- (2005) Applied Physics Letters , vol.86 , Issue.5 , pp. 1-3
- Park, K.J.¹ Doub, J.M.² Gougousi, T.³ Parsons, G.N.⁴

16
- 10044271096
- 10.1063/1.1812832
- S. K. Kim, W.-D. Kim, K.-M. Kim, C. S. Hwang, and J. Jeong, Appl. Phys. Lett., 85, 4112 (2004). 10.1063/1.1812832
- (2004) Appl. Phys. Lett. , vol.85 , pp. 4112
- Kim, S.K.¹ Kim, W.-D.² Kim, K.-M.³ Hwang, C.S.⁴ Jeong, J.⁵

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.