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Volumn 158, Issue 8, 2011, Pages

Post plasma etch residue removal in dilute HF solutions

Author keywords

[No Author keywords available]

Indexed keywords

AERATED CONDITIONS; DEAERATED CONDITIONS; DILUTE HF SOLUTIONS; NOVOLAK; PHOTORESIST FILM; PLASMA ETCH; POST-PLASMA; REMOVAL RATE; RESIDUE REMOVAL; X-RAY PHOTOELECTRON SPECTROSCOPY STUDIES;

EID: 80051741318     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3597618     Document Type: Article
Times cited : (11)

References (30)
  • 4
    • 80051758964 scopus 로고    scopus 로고
    • Ph.D. Dissertation, Department of Chemical Engineering, Georgia Institute of Technology
    • C. Timmons, Ph.D. Dissertation, Department of Chemical Engineering, Georgia Institute of Technology (2004).
    • (2004)
    • Timmons, C.1
  • 16
    • 33751252001 scopus 로고    scopus 로고
    • Study of the post-etch cleaning compatibility with dense and porous ULK materials - characterization of the process impact
    • DOI 10.1016/j.mee.2006.10.025, PII S0167931706005296
    • D. Rebiscoul, B. Puyrenier, L. Broussous, D. Louis, and G. Passemard, Microelectron. Eng., 83, 2319 (2006). 10.1016/j.mee.2006.10.025 (Pubitemid 44792820)
    • (2006) Microelectronic Engineering , vol.83 , Issue.11-12 , pp. 2319-2323
    • Rebiscoul, D.1    Puyrenier, B.2    Broussous, L.3    Louis, D.4    Passemard, G.5
  • 17
    • 34648846042 scopus 로고    scopus 로고
    • Porosity and structure evolution of a SiOCH low k material during post-etch cleaning process
    • DOI 10.1016/j.mee.2007.07.001, PII S0167931707006363
    • L. Broussous, W. Puyrenier, D. Rebiscoul, V. Rouessac, and A. Ayral, Microelectron. Eng., 84, 2600 (2007). 10.1016/j.mee.2007.07.001 (Pubitemid 47454656)
    • (2007) Microelectronic Engineering , vol.84 , Issue.11 , pp. 2600-2605
    • Broussous, L.1    Puyrenier, W.2    Rebiscoul, D.3    Rouessac, V.4    Ayral, A.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.