메뉴 건너뛰기




Volumn 83, Issue 11-12, 2006, Pages 2319-2323

Study of the post-etch cleaning compatibility with dense and porous ULK materials - characterization of the process impact

Author keywords

Characterization; Compatibility; Post via etch cleaning; Ultra low K

Indexed keywords

COPPER; ELECTRIC POWER SYSTEM INTERCONNECTION; ELECTRONIC STRUCTURE; ETCHING; HYDROPHOBICITY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POROUS MATERIALS;

EID: 33751252001     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2006.10.025     Document Type: Article
Times cited : (8)

References (6)
  • 1
    • 33751217041 scopus 로고    scopus 로고
    • The International Technology Roadmap for Semiconductors, Semiconductor Industry Association, Interconnect (2005).
  • 2
    • 8644246782 scopus 로고    scopus 로고
    • M.R. Baklanov, Q.T. Le, E. Kesters, F. Iacopi, J. Van Aelst, H. Struyf, W. Boullart, S. Vanhaelemeersch, K. Maex, in: Proceedings of the IEEE 2004 International Interconnect Technology Conference, 2004, pp. 187-189.
  • 4
    • 28244484712 scopus 로고    scopus 로고
    • V. Jousseaume, M. Assous, A. Zenasni, S. Maitrejean, B. Remiat, P. Leduc, H. Trouve, C. Le-Cornec, M. Fayolle, A. Roule, F. Ciaramella, D. Bouchu, T. David, A. Roman, T. Morel, D. Rebiscoul, G. Prokopowicz, M. Jackman, C. Guedj, D. Louis, M. Gallagher, G. Passemard, in: Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005, pp. 60-62.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.