Enhancement of the photoluminescence of silicon oxide defect states by combining silicon oxide with silicon nanowires

Journal of Applied Physics

Volumn 102, Issue 1, 2007, Pages

  Noe P ^a   Guignard, J ^a   Gentile, P ^a   Delamadeleine, E ^a   Calvo, V ^a   Ferret, P ^b   Dhalluin, F ^c   Baron, T ^c  

^a CEA GRENOBLE   (France)

^b CEA LETI   (France)

^c Laboratoire Interdisciplinaire de Physique   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; DEFECTS; LIGHT EMISSION; OPTOELECTRONIC DEVICES; PHOTOLUMINESCENCE; SEMICONDUCTING SILICON;

CARRIER RECOMBINATION; DEPOSITION TECHNIQUES; SILICON NANOWIRES (SINW); SILICON OXIDE;

NANOWIRES;

EID: 34547379219     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2751488     Document Type: Article

References (12)

1. C. Tsai, K. -H. Li, J. Sarathy, S. Shih, J. C. Campbell, B. K. Hance, and J. M. White, Appl. Phys. Lett. 0003-6951 10.1063/1.105869 59, 2814 (1991).
2. K. Kim, M. S. Suh, T S. Kim, C. J. Youn, E. K. Suh, Y. J. Shin, K. B. Lee, H. J. Lee, M. H. An, H. J. Lee, and H. Ryu, Appl. Phys. Lett. 0003-6951 10.1063/1.117566 69, 3908 (1996).
3. Y. Cui and C. M. Lieber, Science 0036-8075 10.1126/science.291.5505.851 291, 851 (2001).
4. J. D. Holmes, K. P. Johnston, R. C. Doty, and B. A. Korgel, Science 0036-8075 10.1126/science.287.5457.1471 287, 1471 (2000).
5. Y. Cui, Q. Wei, H. Park, and C. M. Lieber, Science 0036-8075 10.1126/science.1062711 293, 1289 (2001).
6. D. P. Yu, Q. L. Hang, Y. Ding, H. Z. Zhang, Z. G. Bai, J. J. Wang, Y. H. Zou, W. Qian, G. C. Xiong, and S. Q. Feng, Appl. Phys. Lett. 0003-6951 10.1063/1.122677 73, 3076 (1998).
7. Z. G. Bai, D. P. Yu, J. J. Wang, Y. H. Zou, W. Qian, J. S. Fu, S. Q. Feng, J. Xu, and L. P. You, Mater. Sci. Eng., B 0921-5107 10.1016/S0921-5107(99) 00501-2 72, 117 (2000).
8. J. Qi, A. M. Belcher, and J. M. White, Appl. Phys. Lett. 0003-6951 10.1063/1.1569982 82, 2616 (2003).
9. T. K. Sham, S. J. Naftel, P. -S. G. Kim, R. Sammynaiken, Y. H. Tang, I. Coulthard, A. Moewes, J. W. Freeland, Y. -F. Hu, and S. T. Lee, Phys. Rev. B 0163-1829 10.1103/PhysRevB.70.045313 70, 045313 (2004).
10. H. Nishikawa, T. Shiroyama, R. Nakamura, Y. Ohki, K. Nagasawa, and Y. Hama, Phys. Rev. B 0163-1829 10.1103/PhysRevB.45.586 45, 586 (1992).
11. Y. Wang, Y. Ishikawa, and N. Shibata, Jpn. J. Appl. Phys., Part 1 0021-4922 10.1143/JJAP.41.5177 41, 5177 (2002).
12. K. Vanheusden and A. Stesmans, Appl. Phys. Lett. 0003-6951 10.1063/1.111530 64, 2575 (1994).