The influence of defect states on non-equilibrium carrier dynamics in GaN nanowires

Semiconductor Science and Technology

Volumn 25, Issue 2, 2010, Pages

  Upadhya, Prashanth C ^a   Li, Qiming ^b   Wang, George T ^b   Fischer, Arthur J ^b   Taylor, Antoinette J ^a   Prasankumar, Rohit P ^a  

^a LOS ALAMOS NATIONAL LABORATORY   (United States)

^b SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER DYNAMICS; CARRIER RELAXATION; DEFECT STATE; EXCITATION DENSITY; GAN NANOWIRES; LASING THRESHOLD; NANOPHOTONIC DEVICES; NON-EQUILIBRIUM CARRIERS; NONRADIATIVE DEFECTS; OPTICAL PUMP-PROBE SPECTROSCOPY; PHOTOEXCITED CARRIERS; POTENTIAL APPLICATIONS; PUMP FLUENCE; QUASI-ONE-DIMENSIONAL; RELAXATION RATES; SEMICONDUCTOR NANOWIRE; ULTRA-FAST; UNDESIRABLE EFFECTS; YELLOW LUMINESCENCE;

DEFECTS; GALLIUM ALLOYS; GALLIUM NITRIDE; GROWTH TEMPERATURE; LIGHT; NANOPHOTONICS; OPTICAL PUMPING; PHOTONIC DEVICES; PUMPS; SEMICONDUCTOR GROWTH;

NANOWIRES;

EID: 76649144222     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/25/2/024017     Document Type: Article

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