Ni-silicide growth kinetics in Si and Si/SiO2 core/shell nanowires

Nanotechnology

Volumn 22, Issue 36, 2011, Pages

  Ogata, K ^a   Sutter, E ^b   Zhu, X ^a   Hofmann, S ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b BROOKHAVEN NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AS-GROWN; CORE DIAMETERS; CORE/SHELL; CRYSTALLOGRAPHIC ORIENTATIONS; DIFFUSION COEFFICIENTS; FORMING PHASE; GROWTH CONSTANTS; IN-SITU TEM; MORPHOLOGICAL CHANGES; NI-SILICIDE; RATE-LIMITING STEPS; SI NANOWIRE; SILICIDATION; SILICIDE PHASE; SQUARE ROOTS; SQUARE-ROOT DEPENDENCE; STRESS-INDUCED; SYSTEMATIC STUDY; VOLUME EXPANSION;

DIFFUSION; GROWTH KINETICS; NANOWIRES;

SILICIDES;

EID: 80051699187     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/22/36/365305     Document Type: Article

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