InGaAs/GaAs core-shell nanowires grown by molecular beam epitaxy

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 17, Issue 4, 2011, Pages 794-800

  Jabeen, Fauzia ^a,b   Grillo, Vincenzo ^a,c   Martelli, Faustino ^a,c   Rubini, Silvia ^a  

^a LABORATORIO TASC   (Italy)

^b CNRS   (France)

^c CNR   (Italy)

Author keywords

Electron microscopy; nanotechnology; optical spectroscopy; semiconductor growth; semiconductor heterojunctions

Indexed keywords

CORE-SHELL; CORE-SHELL NANOWIRES; FLUX RATIO; GAAS; INGAAS/GAAS; LOW TEMPERATURE PHOTOLUMINESCENCE; OPTICAL SPECTROSCOPY; SEMICONDUCTOR HETEROJUNCTIONS;

EPITAXIAL GROWTH; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; NANOTECHNOLOGY; NANOWIRES; OPTICAL PROPERTIES; SEMICONDUCTOR GROWTH; TRANSMISSION ELECTRON MICROSCOPY;

MOLECULAR BEAMS;

EID: 80051696769     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSTQE.2010.2068279     Document Type: Article

References (19)

1. A. Fakhr, Y. M. Haddara, and R. R. LaPierre, "Dependence of InGaP nanowire morphology and structure on molecular beam epitaxy growth conditions," Nanotechnology, vol. 21, pp. 165601-1-165601-7, 2010.
2. J. B.Wagner, N. Sk̈old, L. R.Wallenberg, and L. Samuelson, "Growth and segregation of GaAs-Alx In1-x P core-shell nanowires," J. Cryst. Growth, vol. 312, pp. 1755-1760, 2010.
3. Y. Kim, H. J. Joyce, Q. Gao, H. H. Tan, C. Jagadish, M. Paladugu, J. Zou, and A. A. Suvorova, "Influence of nanowire density on the shape and optical properties of ternary InGaAs nanowires," Nano Lett., vol. 6, pp. 599-604, 2006.
4. I. Regolin,V.Khorenko,W. Prost, F.-J. Tegude,D. Sudfeld, J.K̈astner, and G. Dumpich, "Composition control in metal-organic vapor-phase epitaxy grown InGaAs nanowhiskers," J. Appl. Phys., vol. 100, pp. 074321-1-074321-5, 2006.
5. T. Sato, J. Motohisa, J. Noborisaka, S. Hara, and T. Fukui, "Growth of InGaAs nanowires by selective-area metalorganic vapor phase epitaxy," J. Cryst. Growth, vol. 310, pp. 2359-2364, 2008.
6. F. Jabeen, S. Rubini, V. Grillo, L. Felisari, and F. Martelli, "Room temperature luminescent InGaAs/GaAs core-shell nanowires," Appl. Phys. Lett., vol. 93, pp. 083117-1-083117-3, 2008.
7. K. Tateno, K. Zhang, and H. Nakano, "Growth of GaInAs/AlInAs heterostructure nanowires for long-wavelength photon emission," Nano Lett., vol. 8, pp. 3645-3650, 2008.
8. I. Regolin, D. Sudfeld, S. L̈uttjohann, V. Khorenko, W. Prost, J. K̈astner, G. Dumpich, C. Meier, A. Lorke, and F.-J. Tegude, "Growth and characterization of GaAs/InGaAs/GaAs nanowhiskers on (111)GaAs," J. Cryst. Growth, vol. 298, pp. 607-611, 2007. (Pubitemid 46157244)
9. M. Piccin, G. Bais, V. Grillo, F. Jabeen, S. De Franceschi, E. Carlino, M. Lazzarino, F. Romanato, L. Businaro, S. Rubini, F. Martelli, and A. Franciosi, "Growth by molecular beam epitaxy and electrical characterization of GaAs nanowires," Phys. E, vol. 37, pp. 134-137, 2007. (Pubitemid 46415678)
10. D. M. Cornet and R. R. LaPierre, "InGaAs/InP core-shell and axial heterostructure nanowires," Nanotechnology, vol. 18, pp. 385305-1-385305-7, 2007.
11. M. Paladugu, J. Zou, Y. Guo, X. Zhang, Y. Kim, H. J. Joyce, Q. Gao, H. H. Tan, and C. Jagadish, "Nature of heterointerfaces in GaAs/InAs and InAs/GaAs axial nanowires heterostructures," Appl. Phys. Lett., vol. 93, pp. 101911-1-101911-3, 2008.
12. V. Grillo. (2008). [Online]. Available: http://tem.s3.infm.it/software
13. A. J. McGibbon, S. J. Pennycook, and J. E. Angelo, "Direct observation of dislocation core structures in CdTe/GaAs(001)," Science, vol. 269, pp. 519-521, 1995.
14. G. Patriarche, F. Glas, M. Tchernycheva, C. Sartel, L. Largeau, and J.-C. Harmand, "Wurtzite to zinc blende phase transition in GaAs nanowires induced by epitaxial burying," Nano Lett., vol. 8, pp. 1638-1643, 2008.
15. R. E. Nahory, M. A. Pollack, W. D. Johnston, Jr., and R. L. Barns, "Band gap versus composition and demonstration of Vegard's law for In1-x Gax Asy P1-y lattice matched to InP," Appl. Phys. Lett., vol. 33, pp. 659-661, 1978.
16. M. Murayama and T. Nakayama, "Chemical trend of band offsets at wurtzite/zinc-blende heterocrystalline semiconductor interfaces," Phys. Rev. B, vol. 49, pp. 4710-4724, 1994.
17. F. Jabeen, S. Rubini, and F. Martelli, "Growth of III-V semiconductor nanowires by molecular beam epitaxy," Microelectron. J., vol. 40, pp. 442-445, 2009.
18. x Ga1-x As/GaAs heterostructures," Nanotechnology, vol. 20, pp. 075603-1-075603-6, 2009.
19. F. Martelli, M. Capizzi, A. Frova, A. Polimeni, F. Sarto, M. R. Bruni, and M. G. Simeone, "Exciton confinement in GaAs quantum barriers," Phys. Rev. B, vol. 48, pp. 1643-1646, 1993.