Atypical self-activation of Ga dopant for Ge nanowire devices

Nano Letters

Volumn 11, Issue 8, 2011, Pages 3108-3112

  Zeiner, Clemens ^a   Lugstein, Alois ^a   Burchhart, Thomas ^a   Pongratz, Peter ^a   Connell, Justin G ^b   Lauhon, Lincoln J ^b   Bertagnolli, Emmerich ^a  

^a VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

^b Northwestern University   (United States)

Author keywords

gallium; germanium; ion beam doping; Nanowire; self activation

Indexed keywords

ATOM PROBE TOMOGRAPHY; CONDUCTIVITY ENHANCEMENT; CONTACT PROPERTIES; DEVICE PERFORMANCE; FOUR-POINT MEASUREMENTS; GA DOPANTS; GERMANIUM NANOWIRES; IN-SITU DOPING; ION FLUENCES; MOSFETS; NANOWIRE DEVICES; ORDERS OF MAGNITUDE; ROOM TEMPERATURE; SELF-ACTIVATION; TEMPERATURE-DEPENDENT CONDUCTIVITY; TWO-POINT;

ION BEAMS; IONS; NANOWIRES;

GERMANIUM;

EID: 80051634088     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl201105k     Document Type: Article

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