Design and modeling of HgCdTe nBn detectors

Journal of Electronic Materials

Volumn 40, Issue 8, 2011, Pages 1624-1629

  Itsuno, A M ^a   Phillips, J D ^a   Velicu, S ^b  

^a UNIVERSITY OF MICHIGAN   (United States)

^b EPIR TECHNOLOGIES INC   (United States)

Author keywords

alternative detector design; HgCdTe; nBn; photodetector; unipolar device

Indexed keywords

CURRENT VOLTAGE; CUTOFF WAVELENGTHS; DESIGN AND MODELING; DETECTIVITY; DETECTOR DESIGN; DETECTOR STRUCTURE; DEVICE STRUCTURES; DOPING CONCENTRATION; HGCDTE; LONG-WAVELENGTH INFRARED; MERCURY CADMIUM TELLURIDE; NBN; NUMERICAL MODELING; OPTICAL RESPONSE; P-N JUNCTION; P-TYPE DOPING; RESPONSIVITY; THERMAL CARRIERS; UNIPOLAR DEVICES;

CADMIUM; CADMIUM COMPOUNDS; CADMIUM TELLURIDE; CURRENT VOLTAGE CHARACTERISTICS; DETECTORS; INFRARED RADIATION; MERCURY (METAL); MERCURY COMPOUNDS; OPTOELECTRONIC DEVICES; SEMICONDUCTOR JUNCTIONS;

STRUCTURAL DESIGN;

EID: 80051596533     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-011-1614-0     Document Type: Conference Paper

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