Use of nBn structures to suppress surface leakage currents in unpassivated InAs infrared photodetectors

Electronics Letters

Volumn 44, Issue 25, 2008, Pages 1487-1488

  Pedrazzani, J R ^a   Maimon, S ^a   Wicks, G W ^a  

^a UNIVERSITY OF ROCHESTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INDIUM ARSENIDE; LEAKAGE CURRENTS; PHOTODETECTORS; SEMICONDUCTING INDIUM; SEMICONDUCTOR JUNCTIONS;

DEVICE TEMPERATURES; INFRARED PHOTO DETECTORS; ORDERS OF MAGNITUDES; P-N JUNCTIONS; RECOMBINATION MECHANISMS; SURFACE LEAKAGE CURRENTS;

OPTOELECTRONIC DEVICES;

EID: 57349113316     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20082925     Document Type: Article

References (13)

1. Krier, A., Gao, H.H., and Mao, Y.: ' A room temperature photovoltaic detector for the mid-infrared (1.8-3.4mm) wavelength region ', Semicond. Sci. Technol., 1998, 13, (8), p. 950-956 10.1088/0268-1242/13/8/021 0268-1242
2. Krier, A., and Suleiman, W.: ' Uncooled photodetectors for the 3-5mm spectral range based on III-V heterojunctions ', Appl. Phys. Lett., 2006, 89, (8), p. 083512-1-3 0003-6951
3. Rogalski, A., and Chrzanowski, K.: ' Infrared devices and techniques ', Opto-Electron. Rev., 2002, 10, (2), p. 111-136 1230-3402
4. Esaki, L.: ' Discovery of the tunnel diode ', IEEE Trans. Electron. Devices, 1976, 23, (7), p. 644-647 10.1109/T-ED.1976.18466 0018-9383
5. Maniv, S.: ' Current leakage analysis in narrow gap semiconductor diodes ', Proc. SPIE, 1987, 819, p. 103-116
6. Maimon, S., and Wicks, G.W.: ' nBn detector, and infrared detector with reduced dark current and higher operating temperature ', Appl. Phys. Lett., 2006, 89, (15), p. 151109-1-3 0003-6951
7. Petritz, R.L.: ' Fundamentals of infrared detectors ', Proc. IRE, 1959, 47, (9), p. 1458-1467
8. 0.86 on InAs substrates ', Appl. Phys. Lett., 1990, 56, (13), p. 1242-1244 10.1063/1.102526 0003-6951
9. Mead, C.A., and Spitzer, W.G.: ' Fermi level position at semiconductor surfaces ', Phys. Rev. Lett., 1963, 10, (11), p. 471-472 0031-9007
10. Spicer, W.E., Lindau, I., Skeath, P., Su, C.Y., and Chye, P.: ' Unified mechanism for Schottky-barrier formation and III-V oxide interface states ', Phys. Rev. Lett., 1980, 44, (6), p. 420-423 10.1103/PhysRevLett.44.420 0031-9007
11. Yang, C.H., Yang, M.J., Cheng, K.A., and Culbertson, J.C.: ' A novel InAs quantum wire system ', Physica E, 2003, 17, (1-4), p. 161-163 10.1016/S1386-9477(02)00731-2 1386-9477
12. Nowaczyk, M., Sek, G., Misiewicz, J., Sciana, B., Radziewicz, D., and Tlaczala, M.: ' Photoreflectance study of delta-doped semiconductor layers by a fast Fourier transformation ', Thin Solid Films, 2000, 380, (1-2), p. 243-245 0040-6090
13. Donati, S.: ' Photodetectors: Devices, circuits, and applications ', (Prentice Hall PTR, 2000), p. 44