Dual-donor codoping approach to realize low-resistance n-type ZnS semiconductor

Applied Physics Letters

Volumn 99, Issue 5, 2011, Pages

  Li, Dengfeng ^a   Deng, Bo ^a   Xue, Shuwen ^c   Wang, Zhiguo ^b   Gao, Fei ^d  

^a CHONGQING UNIVERSITY OF POSTS AND TELECOMMUNICATIONS   (China)

^b UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

^c LINGNAN NORMAL UNIVERSITY   (China)

^d PACIFIC NORTHWEST NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CO-DOPING; CODOPING METHOD; CONDUCTION-BAND MINIMUM; DENSITY-OF-STATES ANALYSIS; FIRST-PRINCIPLES CALCULATION; FORMATION ENERGIES; LOW RESISTANCE; N-TYPE DOPANTS; SHALLOW DONORS;

BINDING ENERGY; CALCULATIONS; CARRIER CONCENTRATION; ELECTRON MOBILITY; ELECTRONIC STRUCTURE; TIN; ZINC;

ZINC SULFIDE;

EID: 80051593629     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3624531     Document Type: Article

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