Effect and comparison of co-doping of Ag, Ag + In, and Ag + Cl in ZnS:N/GaAs layers prepared by vapor-phase epitaxy

Journal of Crystal Growth

Volumn 214, Issue , 2000, Pages 556-561

  Kishimoto, S ^a,b   Hasegawa, T ^a   Kinto, H ^c   Matsumoto, O ^a   Iida, S ^a  

^a NAGAOKA UNIVERSITY OF TECHNOLOGY   (Japan)

^b Monobe otsu 200 1 783 8508   (Japan)

^c NONE

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CARRIER MOBILITY; HALL EFFECT; LIGHT EMITTING DIODES; PHOTOLUMINESCENCE; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR DOPING; SILVER; ZINC SULFIDE;

IMPURITY DOPING;

VAPOR PHASE EPITAXY;

EID: 0033705755     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(00)00151-2     Document Type: Article

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