Luminescence properties of lithium-doped ZnS epitaxial layers grown by MOCVD

Journal of Crystal Growth

Volumn 237-239, Issue 1-4, 2002, Pages 1570-1574

  Nakamura, Seiji ^a   Yamaguchi, Junzo ^a   Takagimoto, Shinsuke ^a   Yamada, Yoichi ^a   Taguchi, Tsunemasa ^a  

^a YAMAGUCHI UNIVERSITY   (Japan)

Author keywords

A1. Doping; A3. Metalorganic chemical vapor deposition; B2. Semiconducting II VI materials

Indexed keywords

ANNEALING; ELECTRIC CONDUCTIVITY; EXCITONS; LITHIUM; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; ZINC SULFIDE;

RADIATIVE RECOMBINATION;

EPITAXIAL GROWTH;

EID: 0036531560     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)02380-6     Document Type: Article

References (11)