Donor-donor binding in semiconductors: Engineering shallow donor levels for ZnTe

Applied Physics Letters

Volumn 83, Issue 17, 2003, Pages 3522-3524

  Janotti, A ^a,b   Wei, Su Huai ^a   Zhang, S B ^a  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

^b OAK RIDGE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; BAND STRUCTURE; BINDING ENERGY; CARRIER CONCENTRATION; FERMI LEVEL; IONIZATION; PROBABILITY DENSITY FUNCTION; SEMICONDUCTOR DOPING; SUBSTITUTION REACTIONS;

ATOMIC NUMBER; DONORS STATES;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 0242498416     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1622791     Document Type: Article

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