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Volumn 76, Issue 13, 2000, Pages 1695-1697

P-type doping with N and Li acceptors of ZnS grown by metalorganic vapor phase epitaxy

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0001680021     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.126139     Document Type: Article
Times cited : (40)

References (17)
  • 16
    • 0342555465 scopus 로고    scopus 로고
    • Wide bandgap II-VI semiconductors
    • EMIS Datareviews No. 17, edited by R. Bhargava INSPEC, London
    • J. Gutowski, P. Bäume, and K. Hauke, in Wide Bandgap II-VI Semiconductors, EMIS Datareviews No. 17, edited by R. Bhargava (INSPEC, London, 1997), p. 134.
    • (1997) EMIS Datareviews No. 17 , vol.17 , pp. 134
    • Gutowski, J.1    Bäume, P.2    Hauke, K.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.