Three-Dimensional nanodot-type floating gate memory fabricated by bio-layer-by-layer method

Applied Physics Express

Volumn 4, Issue 8, 2011, Pages

  Ohara, Kosuke ^a   Zheng, Bin ^a,b   Uenuma, Mutsunori ^a,b   Ishikawa, Yasuaki ^a,b   Shiba, Kiyotaka ^b,c   Yamashita, Ichiro ^a,b   Uraoka, Yukiharu ^a,b  

^a NARA INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c CANCER INSTITUTE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE RETENTION; FLOATING GATE MEMORIES; HIGH-DENSITY; MEMORY PROPERTIES; MULTI-LAYERED; NANO-DOT ARRAYS; TUNNEL OXIDE LAYERS;

COBALT; SILICON COMPOUNDS;

NANOSTRUCTURED MATERIALS;

EID: 80051585720     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.4.085004     Document Type: Article

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