Improvement of hafnium oxide/silicon oxide gate dielectric stack quality by high pressure D2O post deposition annealing

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 46, Issue 20-24, 2007, Pages

  Jo, Minseok ^a   Chang, Man ^a   Park, Hokyung ^a   Hwang, Hyunsang ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

Hafnium oxide; Heavy water; High pressure annealing; MOS device; Thermal desorption

Indexed keywords

ANNEALING; ELECTRIC FIELDS; HAFNIUM COMPOUNDS; HEAVY WATER; MOS DEVICES; THERMAL DESORPTION;

ELECTRICAL FIELD STRESS; HAFNIUM OXIDE; HIGH PRESSURE ANNEALING;

GATE DIELECTRICS;

EID: 34547850410     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.L531     Document Type: Article

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