Floating gate memory with biomineralized nanodots embedded in high-κ gate dielectric

Applied Physics Express

Volumn 2, Issue 9, 2009, Pages

  Ohara, Kosuke ^a   Yamashita, Ichiro ^a   Yaegashi, Toshitake ^b   Moniwa, Masahiro ^b   Yoshimaru, Masaki ^b   Uraoka, Yukiharu ^a,c  

^a NARA INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

^b SEMICONDUCTOR TECHNOLOGY ACADEMIC RESEARCH CENTER   (Japan)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE VOLTAGE; CHARGE RETENTION; FLOATING GATE MEMORIES; GATE OXIDE; HIGH-DENSITY; LARGE HYSTERESIS; MEMORY DEVICE; MEMORY WINDOW; METAL OXIDE SEMICONDUCTOR; MOS-FET; NANODOTS; RELIABILITY CHARACTERISTICS; TUNNEL OXIDE];

CAPACITANCE; CAPACITORS; DIELECTRIC MATERIALS; FIELD EFFECT TRANSISTORS; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; METALLIC COMPOUNDS; MOS CAPACITORS; SILICON COMPOUNDS; WINDOWS;

GATE DIELECTRICS;

EID: 70349097553     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.2.095001     Document Type: Article

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