The possibility of chemically inert, graphene-based all-carbon electronic devices with 0.8 eV gap

ACS Nano

Volumn 5, Issue 5, 2011, Pages 3475-3482

  Qi, Jing Shan ^a,b   Huang, Jian Yu ^c   Feng, Ji ^a   Shi, Da Ning ^b   Li, Ju ^a  

^a UNIVERSITY OF PENNSYLVANIA   (United States)

^b NANJING UNIVERSITY OF AERONAUTICS AND ASTRONAUTICS   (China)

^c SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

Bilayer edge; Graphene; Half nanotube; Hybrid device; Nanotube; Self folding

Indexed keywords

AB INITIO CALCULATIONS; BI-LAYER; COMPLEX TOPOLOGY; CONTACT PROBES; ELECTRONIC DEVICE; ELECTRONIC GAP; ELECTRONIC MATERIALS; HALF-NANOTUBE; HIGH-TEMPERATURE ANNEALING; HYBRID DEVICES; IN-SITU; LOGIC APPLICATIONS; NORMAL GAS; NOVEL DEVICE ARCHITECTURES; ON-OFF RATIO; ROOM TEMPERATURE; SELF-FOLDING; SEMI-CONDUCTING NANOTUBES; TRANSMISSION SPECTRUMS; TRANSPORT CHARACTERISTICS;

CALCULATIONS; CARBON NANOTUBES; ELECTRON DEVICES; ELECTRONIC DENSITY OF STATES; GRAPHITE ELECTRODES; MONOLAYERS; QUANTUM CHEMISTRY; SEMICONDUCTOR JUNCTIONS; TOPOLOGY;

GRAPHENE;

CARBON NANOTUBE; GRAPHITE;

ARTICLE; CHEMISTRY; COMPUTER AIDED DESIGN; EQUIPMENT; EQUIPMENT DESIGN; FEASIBILITY STUDY; PARTICLE SIZE; SEMICONDUCTOR; ULTRASTRUCTURE;

COMPUTER-AIDED DESIGN; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; FEASIBILITY STUDIES; GRAPHITE; NANOTUBES, CARBON; PARTICLE SIZE; SEMICONDUCTORS;

EID: 80051524331     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn102322s     Document Type: Article

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