Dielectric loss peak due to platinum electrode porosity in lead zirconate titanate thin-film capacitors

Applied Physics Letters

Volumn 81, Issue 13, 2002, Pages 2436-2438

  Jung, D J ^a   Dawber, M ^a   Ruediger, A ^a   Scott, J F ^a   Kim, H H ^b   Kim, Kinam ^b  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CONSTRICTION EFFECTS; FERROELECTRIC THIN-FILM CAPACITORS; IMPEDANCE SPECTROSCOPY MEASUREMENTS; IN-SITU; LEAD ZIRCONATE TITANATE; LOW FREQUENCY; MODERATE TEMPERATURE; OXYGEN ELECTRODE; PLATINUM ELECTRODES; POROUS PLATINUM; SAMSUNG; THIN-FILM CAPACITORS;

DIELECTRIC DEVICES; DIELECTRIC LOSSES; ELECTRODES; PLATINUM; SEMICONDUCTING LEAD COMPOUNDS; THIN FILM CIRCUITS;

ELECTROLYTIC CAPACITORS;

EID: 79956003040     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1509855     Document Type: Article

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