Metal - Insulator transition and magnetotransport in III-V compound diluted magnetic semiconductors

Materials Science and Engineering: B

Volumn 63, Issue 1-2, 1999, Pages 88-95

  Iye, Y ^a,b   Oiwa, A ^a   Endo, A ^a   Katsumoto, S ^a,b   Matsukura, F ^c   Shen, A ^c   Ohno, H ^c   Munekata, H ^d  

^a UNIVERSITY OF TOKYO   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c TOHOKU UNIVERSITY   (Japan)

^d TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Anomalous hall effect; Carrier induced ferromagnetism; Diluted magnetic semiconductor; Lattice mismatch induced strain; Metal insulator transition; Negative magnetoresistance

Indexed keywords

BAND STRUCTURE; CARRIER MOBILITY; ELECTRON TRANSPORT PROPERTIES; FERROMAGNETISM; HALL EFFECT; HOLE TRAPS; MAGNETIC ANISOTROPY; MAGNETIC MOMENTS; MAGNETIZATION; MAGNETORESISTANCE; METAL INSULATOR BOUNDARIES; ULTRATHIN FILMS;

CARRIER-INDUCED FERROMAGNETISMS; DILUTED MAGNETIC SEMICONDUCTORS (DMS); LATTICE-MISMATCH-INDUCED STRAIN; METAL-INSULATOR TRANSITIONS; NEGATIVE MAGNETORESISTANCES;

MAGNETIC SEMICONDUCTORS;

EID: 0032631350     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(99)00057-4     Document Type: Article

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